Light emitting semiconductor element and method of manufacturing the same

ABSTRACT

A light emitting semiconductor element includes at least two electrically conductive units, at least a light emitting semiconductor die and a light transmitting layer. A groove is located between the two electrically conductive units. The light emitting semiconductor die is cross over the electrically conductive units. The light transmitting layer covers the light emitting semiconductor and partially fills within the groove for linking the electrically conductive units.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light emitting semiconductor element,and in particular to a light emitting diode (LED) element.

2. Description of Prior Art

Reference is made to FIG. 1, which is a sectional view of conventionallight emitting semiconductor element.

The light emitting semiconductor element includes a first lead frame800, a die-carrying frame 802, a second lead frame 804, a light emittingdiode (LED) die 806, an isolating body 808, a plurality of wires 810 anda transparent adhesive 814. The isolating body 808 is made of opaqueadhesive, such as polyphthalamide (PPA), for fastening the first leadframe 800, the chip-carrying frame 802 and the second lead frame 804 andfor forming a die bonding area 812 of cup shape. The die-carrying frame802 is exposed to the die-bonding area 812. The isolating body 808 isformed by inject molding and arranged at the fringe of the first leadframe 800, the die-carrying frame 802 and the second lead frame 804.

The LED die 806 is placed on the die-carrying frame 802 and electricallyconnected to the first lead frame 800 and the second lead frame 804through the wires 810 (such as bonding lines). The transparent adhesive814 is disposed within the die-bonding area 812 to cover the LED die 806and to protect the wires 810.

Accordingly, the first lead frame 800, the die-carrying frame 802, thesecond lead frame 804, the isolating body 808 and the transparentadhesive 814 collectively and air-tightly cover the LED die 806. Theisolating body 808, however, has high thermal resistance and causes badthermal conductive effect. Moreover, the volume of the isolating body808 is the major cause accounted for the size-down difficulty the lightemitting semiconductor element. Furthermore, the resin of manufacturingthe isolating body 808 will age as time elapses and reliable issueaccordingly arises.

SUMMARY OF THE INVENTION

In order to reduce the volume of the light emitting semiconductorelement, enhance heat dissipating effect and reduce manufacturing cost,the present invention provides a light emitting semiconductor element.The light emitting semiconductor element includes at least twoelectrically conductive units, at least one light emitting semiconductordie and a light transmitting layer. A groove is located between the twoelectrically conductive units, and the light emitting semiconductor dieis cross over the electrically conductive units. The light transmittinglayer covers the light emitting semiconductor die and at least fillwithin the groove for linking the two electrically conductive units.

The present invention provides a light emitting semiconductor element.The light emitting semiconductor element includes at least twoelectrically conductive units, at least one light emitting semiconductordie, at least one wire and a light transmitting layer. A groove islocated between the two electrically conductive units. The lightemitting semiconductor die is placed on one of the electricallyconductive units. The wire is cross over the light emittingsemiconductor die and another electrically conductive unit. The lighttransmitting layer covers the light emitting semiconductor die, the wireand at least fill within the groove for linking the electricallyconductive units.

The present invention also provides a manufacturing method of lightemitting semiconductor element, and includes following steps: a)providing a first electrically conductive layer; b) forming at least onegroove on the first electrically conductive layer; c) placing at leastone light emitting semiconductor die on the first electricallyconductive layer and electrically connected to the first electricallyconductive layer at two sides of the groove; d) forming a lighttransmitting layer on the first electrically conductive layer and thelight emitting semiconductor die, the light transmitting layer coveringthe light emitting semiconductor die, linking the first electricallyconductive layer and at least partially filling within the groove.

BRIEF DESCRIPTION OF DRAWING

The features of the invention believed to be novel are set forth withparticularity in the appended claims. The invention itself however maybe best understood by reference to the following detailed description ofthe invention, which describes certain exemplary embodiments of theinvention, taken in conjunction with the accompanying drawings in which:

FIG. 1 is a sectional view of a conventional light emittingsemiconductor element.

FIG. 2A-FIG. 2J are process diagrams showing the manufacturing method ofthe light emitting semiconductor element according to a first embodimentof the present invention.

FIG. 3A-FIG. 3Z are process diagrams showing the manufacturing method ofthe light emitting semiconductor element according to a secondembodiment of the present invention.

FIG. 4A is a sectional view of a lighting module according to a firstembodiment of the present invention.

FIG. 4B is a sectional view of a lighting module according to a secondembodiment of the present invention.

FIG. 4C is a sectional view of a lighting module according to a thirdembodiment of the present invention.

FIG. 5 is a sectional view of an illuminant device according to a firstembodiment of the present invention.

FIG. 6A is a sectional view of a lighting module according to a fourthembodiment of the present invention.

FIG. 6B is a sectional view of a lighting module according to a fifthembodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

A preferred embodiment of the present invention will be described withreference to the drawings.

Reference is made to FIG. 2A to 2J, which are process diagrams showingthe manufacturing method of the light emitting semiconductor elementaccording to a first embodiment of the present invention. The lightemitting semiconductor element may be, but not limited to, lightemitting diode.

As shown in FIG. 2A, a first electrically conductive layer 10 isprovided at first. The first electrically conductive layer 10 is ofplate shape and made of material with good electrically conductiveproperty (such as metal), and the metal is, for example, copper. In anexemplary embodiment, the thickness t of the first electricallyconductive layer 10 is larger than 5 micrometers (μm) for enhancing heatdissipating effect of the light emitting semiconductor element.

As sown in FIG. 2B, a groove 100 is formed on the first electricallyconductive layer 10. The grooves 100 may be formed on the firstelectrically conductive layer 10 by stamping, etching or half-etching.The amount of the groove 100 may be one or more, and in this embodiment,the grooves are, for example, but not limited to, two. As shown in FIG.2C, the grooves 100 are, but not limited to, arranged in parallel.

Accordingly, at least one light emitting semiconductor die 12 is placedon the first electrically conductive layer 10 and electrically connectedthereto, as shown in FIGS. 2D, 2E and 2F. The amount of the lightemitting semiconductor die 12 may be one or more, and in thisembodiment, the amount of the light emitting semiconductor dies 12 are,for example, two, and the light emitting semiconductor dies 12 arepreferably of light emitting diode dies. Each of the light emittingsemiconductor dies 12 includes a plurality of semiconductor layers 130and two connecting pads 128 a and 128 b disposed on the semiconductorlayers 130, so that the light emitting semiconductor die 12 is oflateral structure. In the practical application, the light emittingsemiconductor die 12 may also be of vertical structure. In thisembodiment, the semiconductor layers 130 include a substrate 120, anN-type gallium nitride (GaN) 122, a multiple quantum well (MQW) 124 anda P-type gallium nitride 126 disposed in sequence. The connecting pad128 a is disposed on the N-type gallium nitride 122 and the connectingpad 128 b is disposed on the P-type gallium nitride 126. Each lightemitting semiconductor die 12 emits blue light. However, in thepractical application, lighting color and stacking structure of thesemiconductor layers 130 may be adjusted for practical demand andlimitation.

As shown in FIG. 2D, the light emitting semiconductor dies 12 are placedon the upper surface 102 of the first electrically conductive layer 10in flip chip manner, and the connecting pads 128 a and 128 b of thelight emitting semiconductor dies 12 are cross the grooves 100 andconnected to the first electrically conductive layer 10. In addition,the grooves 100 are partially exposed to the disposing range of thelight emitting semiconductor dies 12. The two connecting pads 128 a and128 b are electrically connected to the first electrically conductivelayer 10 by soldering. However, the two connecting pads 128 a and 128 bmay also be electrically connected to the first electrically conductivelayer 10 by spreading silver glue or electrical silicone resin.

As shown in FIGS. 2E, 2F and 2G, the two pads 128 a and 128 b of thelight emitting semiconductor dies 12 may also be electrically connectedto the first electrically conductive layer 10 at two sides of thegrooves 100 through a plurality of wires 13. The light emittingsemiconductor dies 12 are placed on the first electrically conductivelayer 10, and the disposing direction of light emitting semiconductordies 12 shown in the FIG. 2E and FIG. 2G are opposite to that shown inFIG. 2D. It should be noted that the two connecting pads 128 a and 128 bof the light emitting semiconductor dies 12 must be respectivelyelectrically connected to the first electrically conductive layer 10 attwo sides of the groove 100 to prevent from short circuit problem.

As shown in FIG. 2E and FIG. 2F, the first electrically conductive layer10 includes four grooves 100, the light emitting semiconductor dies 12are placed between each two grooves 100. One end of each wire 13 isconnected to the connecting pads 128 a and 128 b of the light emittingsemiconductor die 12, and another one is across the groove 100 andconnected to the first electrically conductive layer 10. As shown inFIG. 2G, the light emitting semiconductor dies 12 are placed on thefirst electrically conductive layer 10 at one side of the grooves 100,and the connecting pad 128 a of each light emitting semiconductor die 12is electrically connected thereto through wire 13, the connecting pad128 b of each light emitting semiconductor die 12 is electricallyconnected to the first electrically conductive layer 10 at another sideof the groove 100 through wire 13. It should be noted that when thelight emitting semiconductor die 12 is of vertical structure, aconnecting pad disposed on one side of the semiconductor layers can bedirectly and electrically connected to the first electrically conductivelayer 10 at one side of the groove, and another connecting pad can beelectrically connected to the first electrically conductive layer 10 atanother side of the groove.

Accordingly, as shown in FIG. 2H, a light transmitting layer 14 isformed and covers the light emitting semiconductor dies 12, andpartially fills within the grooves 100 through the grooves 100 exposedto the light emitting semiconductor dies 12. Namely, the lighttransmitting layer 14 and the first electrically conductive layer 10collectively and compactly cover the light emitting semiconductor dies12 and link the first electrically conductive layer 10 and the lightemitting semiconductor dies 12. The light transmitting layer 14 ispreferably made of light-pervious isolating material, such as siliconeresin, for providing good isolating effect. In this embodiment, thelight transmitting layer 14 is substantially of hemisphere shape foreffectively enhancing light extracting effect. However, in the practicalapplication, the shape of the light transmitting layer 14 may beadjusted for practical demand and limitation. The light transmittinglayer 14 may be formed by molding, dispensing or placing lens. Asmentioned above, the light transmitting layer 14 links the firstelectrically conductive layer 10 and the light emitting semiconductordies 12, and protects the light emitting semiconductor dies 12, as wellas provides good isolating effect and enhances light extracting effect.

As shown in FIG. 2I, a plurality of light emitting semiconductorelements are formed by cutting the first electrically conductive layer10 along the edge of the light transmitting layer 14. Simultaneously,the electrically conductive layer 10 is separated into at least twoelectrically conductive units 11, and the groove 100 is between each twoelectrically conductive units 11. In addition, each two electricallyconductive units 11 are not electrically connected to each other forpreventing the light emitting semiconductor from short circuit.

Thus, the light emitting semiconductor elements shown in FIG. 2I is anembodiment according to the present invention. The light emittingsemiconductor element includes two electrically conductive units 11, alight emitting semiconductor die 12 and a light transmitting layer 14.The two electrically conductive units 11 are made of electricallyconductive material. Preferably, the thickness t of the two electricallyconductive units 11 is larger than 5 micrometers for reaching good heatdissipating property, and a groove 100 is located between the twoelectrically conductive units 11. The light emitting semiconductor die12 is placed on the two electrically conductive units 11, and includes aplurality of semiconductor layers 130 and two connecting pads 128 a and128 b. The two connecting pads 128 a and 128 b are electricallyconnected to the two electrically conductive units 11. A surface area ofthe electrically conductive units 11 is large than a surface area of thelight emitting semiconductor die 12. The light transmitting layer 14covers the light emitting semiconductor die 12 and at least partiallyfills within the groove 100, so as to link the light emittingsemiconductor die 12 and the electrically conductive units 11, and toprotect the light emitting semiconductor die 12 and enhance lightextracting effect. In a preferable embodiment, the light emittingsemiconductor die 12 is directly placed on the electrically conductiveunits 11, and the thickness t of the electrically conductive units 11 islarger than 5 micrometers for quickly conducting heat generated by thelight emitting semiconductor die 12.

Besides, the light emitting semiconductor die 12 of the light emittingsemiconductor element may be placed on one of the electricallyconductive unit 11, and electrically connected to another electricallyconductive unit through at least one wire 13, as shown in FIG. 2J. Thewires 13 are across the connecting pads 128 a and 128 b and theelectrically conductive units 11 for electrically connected the lightemitting semiconductor die 12 and the electrically conductive units 11.

Reference is made to FIG. 3A to 3Z, which are process diagrams showingthe manufacturing method of the light emitting semiconductor elementaccording to a second embodiment of the present invention. The lightemitting semiconductor element may be, but not limited to, lightemitting diode.

As shown in FIG. 3A, a first light electrically conductive layer 20 isprovided at first. The first light electrically conductive layer 20 isof plate shape and the thickness t is larger than 5 micrometers forquickly conducting heat generated by light emitting semiconductor dieplaced thereon. The first light electrically conductive layer 20includes two second electrically conductive layers 202 and anintermediary layer 204. The intermediary layer 204 is disposed betweenthe second electrically conductive layers 202. The second electricallyconductive layers 202 may be, for example, copper, and the intermediarylayer 203 may be flexibly isolating material, such as polyimide (PI).The first electrically conductive layer 20 further includes an uppersurface 206 and a lower surface 208 opposite to the upper surface 206.In the practical application, the stack structure of the firstelectrically conductive layer 20 may be adjusted for demand andlimitation. Certainly, the first electrically conductive layer 20 mayonly include the second electrically conductive layer 202.

As shown in FIG. 3B, a shielding layer 22 is formed on one of the uppersurface 206 and the lower surface 208 of the first electricallyconductive layer 20. In this embodiment, the shielding layer 22 issimultaneously formed on the upper surface 206 and the lower surface208. Preferably, the shielding layer 22 may be reflecting layer withlight reflecting effect or protecting layer which can enhance thephysical strength of the first electrically conductive layer 20.

Next, a plurality of grooves 200 are formed on the structure mentionedabove, and the grooves 200 may be designed with particular patterns, asshown in FIG. 3C. The grooves 200 may be formed on the firstelectrically conductive layer 20 by stamping, etching or half-etching.The grooves 200 may only penetrate one second electrically conductivelayer 202, as shown in FIG. 3D, or the grooves 200 may simultaneouslypenetrate the second electrically conductive layers 202 and theintermediary layer 204, as shown in 3E. For the convenience of followingdescription, the grooves 200 are, but not limited to, simultaneouslypenetrate the second electrically conductive layers 202 and theintermediary layer 204. In addition, the first electrically conductivelayer 20 may be separated into a plurality of electrically conductiveunits 21 by the grooves 200, as shown in FIG. 3F.

It should be noted that when the first electrically conductive layer 20is separated into a plurality of independent blocks, each block isreferred to as electrically conductive unit 21 in following description.

After forming the grooves, an isolating layer 24 is disposed on thestructure mentioned above, as shown in FIG. 3G. The thickness of theisolating layer 24 may be, but not limited to, designed smaller than 100micrometers.

Next, the structure mentioned above is disposed on a temporary substrate26, as shown in FIG. 3H. An adhesive 28 is included between the firstelectrically conductive layer 20 and the temporary substrate 26. Theadhesive 28 is preferably thermal release tape (TRT).

After that, a plurality of light emitting semiconductor dies 30 areplaced on the first electrically conductive layer 20 and electricallyconnected thereto, as shown 31. The grooves 200 are partially exposed tothe light emitting semiconductor dies 30, as shown in FIG. 3J. Eachlight emitting semiconductor die 30 includes a plurality ofsemiconductor layers 310 and two connecting pads 308 a and 308 b. Inthis embodiment, the semiconductor layers 310 for emitting blue lightand include a substrate 300, an N-type gallium nitride 302, a multiplequantum well 304 and a P-type gallium nitride 306 disposed in sequence.The connecting pad 308 a is disposed on the N-type gallium nitride 302,the connecting pad 308 b is disposed in the P-type gallium nitride 306,so that the light emitting semiconductor die 30 is of lateral structure.In the practical application, lighting color and stacking structure ofthe semiconductor layer 310 may be adjusted for practical demand andlimitation. The light emitting semiconductor dies 30 may also bevertical structure.

As shown in FIG. 3I, the light emitting semiconductor dies 30 aredisposed on the upper surface 206 of the first electrically conductivelayer 20 in flip chip manner, and the connecting pads 308 a and 308 b ofthe light emitting semiconductor die 30 are across the groove 200 andconnected to the first electrically conductive layer 20. The twoconnecting pads 308 a and 308 b of the light emitting semiconductor dies30 are electrically connected to the first electrically conductive layer20 by soldering, spreading silver glue or electrical silicone, fluxeutectic bonding technology or direct eutectic bonding technology. Asshown in FIG. 3J, the light emitting semiconductor dies 30 may beelectrically connected in parallel or series through the grooves 200with particular patterns.

As shown in FIG. 3K to FIG. 3N, a light transmitting layer 34 is formedfor covering the light emitting semiconductor dies 30, and then iseliminated with partial first electrically connective layer 20, thus thefirst electrically conductive layer 20 is separated into a plurality ofelectrically conductive units 21. The light emitting semiconductor dies30 are electrically connected in parallel or series through theelectrically conductive units 21. The light transmitting layer 21compactly covers the light emitting semiconductor dies 30 and fillswithin the grooves 200 under the light emitting semiconductor dies 30through the grooves 200 exposed to the light emitting semiconductor dies30 and links the electrically conductive units 21. The lighttransmitting layer 34 is preferably made of light-pervious isolatingmaterial for providing good electrically isolating effect. As shown inFIG. 3K and 3L, the light transmitting layer 34 covers the lightemitting semiconductor dies 30, respectively, thus each light emittingsemiconductor die 30 is of single-chip package type. The lighttransmitting layer 34 covering each light emitting semiconductor die 30is substantially of hemisphere shape for effectively enhancing lightextracting effect. As shown in FIG. 3M and FIG. 3N, the lighttransmitting layer 34 simultaneously covers the light emittingsemiconductor dies 30 and the electrically conductive units 21, thus thelight emitting semiconductor dies 30 are of multi-chip package type. Thedistance located between an upper surface of the light transmittinglayer 34 and the electrically conductive unit 21 is gradually decreasedalong a direction away from the light emitting semiconductor dies 30,thus the light transmitting layer 34 covering each light emittingsemiconductor die 30 is substantially of hemisphere shape foreffectively enhancing light extracting effect.

The light transmitting layer 34 may be formed by molding, dispensing orplacing lens. The electrically conductive units 21 may be formed with adam 32 surrounding the light emitting semiconductor die 20 thereon whenthe light transmitting layer 30 is formed by dispensing, as shown inFIG. 3O. The dam 32 is used to provide space-limiting, thus the lighttransmitting layer 34 is of hemisphere shape for effectively enhancinglight extracting effect.

Moreover, in the embodiment that the first electrically conductive layer21 is separated into multiple electrically conductive units 21 throughthe grooves 200, a surface area of the electrically conductive units 21must be larger than a surface area of the light emitting semiconductordie 30. Furthermore, as shown in FIGS. 3P and 3Q, the light transmittinglayer 34 simultaneously covers the light emitting semiconductor dies 30and the fringe of the electrically conductive units 21 for providingpreferable electrically isolating effect. The distance of the uppersurface of the light transmitting layer and the electrically conductiveunits is uniform.

As shown in FIG. 3R, the distance of the upper surface of the lighttransmitting layer 34 and the electrically conductive units 21 isgradually decreased along a direction away from the light emittingsemiconductor dies 30, thus the light transmitting layer 34 covering thelight emitting semiconductor dies 30 is substantially of hemisphereshape for effectively enhancing light extracting effect. In addition,the light emitting semiconductor dies 30 may be electrically connectedin parallel or series through the electrically conductive units 21, asshown in FIG. 3S. The electrically connecting type shown in the FIG. 3Sis only for one example and not the limitation of the protection scope.

A wavelength-converting matter 36 is disposed on the upper surface orlower surface the light transmitting layer 34, or disposed within thelight transmitting layer 34. The wavelength-converting matter 36 may bephosphor, quantum dot phosphor quantum well film. The light emitted fromthe light emitting semiconductor dies 30 passes through thewavelength-converting matter 36, and is converted intowavelength-converted light. In this embodiment, the light emitting fromeach light emitting semiconductor die 30 is blue, and thewavelength-converted light is yellow. The wavelength-converting matter36 coverts a part of light emitted from the light emitting semiconductordies 30 into wavelength-converted light (yellow light), which is to bemixed with other blue light emitted from the light emittingsemiconductor dies 30 to generate white light. The wavelength-convertingmatter 36 may be placed near the light emitting semiconductor die 30, asshown in FIG. 3T, and the wavelength-converting matter 36 may be placedin front of the light transmitting layer 34, and cover the lightemitting semiconductor die 30. Namely, the wavelength-converting matteris placed close to the light emitting semiconductor dies 30. Thewavelength-converting matter 36, however, may be placed on the lighttransmitting layer 34 after forming the light transmitting layer 34 onthe light emitting semiconductor dies 30. Namely, thewavelength-converting matter 36 is placed far from the light emittingsemiconductor die 30, as shown in FIG. 3U. The wavelength-convertingmatter 36 may also place within the light transmitting layer 34uniformly, as shown in FIG. 3V. The wavelength-converting matter 36 isdirectly mixed with the light transmitting layer 36, and covers thelight emitting semiconductor die 30 through dispensing or molding.

As shown in FIGS. 3W to 3Z, a plurality of light emitting semiconductorelements are form by cutting, and then the temporary substrate 26 isremoved. Simultaneously, the electrically conductive layer 20 under eachlight emitting semiconductor die 30 is separated into at least twoelectrically conductive units 21, and the groove 200 is located betweeneach two electrically conductive units 21. In addition, each twoelectrically conductive units 21 are not electrically connected to eachother for preventing the light emitting semiconductor from shortcircuit.

As shown in FIG. 3W, the surface area of the electrically conductiveunit 21 is larger than the area of the electrically conductive unit 21covering with the light transmitting layer 34. In addition, theisolating layer 24 may be removed and the electrically conductive unit21 is bent for the function of convenient insertion, as shown in FIG.3X.

As shown in FIG. 3Y, the surface area of the electrically conductiveunits 21 is substantially equal to the area of the electricallyconductive units 21 covering with the light transmitting layer 34.

As shown in FIG. 3Z, the light transmitting layer 34 covers multiplelight emitting semiconductor dies 30, so as to form a multi-chip packagelight emitting semiconductor element. In addition, the light emittingsemiconductor dies 30 are in serial or parallel electrical connectionthrough the electrically connected units 21.

Thus, the light emitting semiconductor element according to the presentinvention includes at least two electrically connected units 21, atleast one light emitting semiconductor die 30 and a light transmittinglayer 34. The two electrically conductive units 2 are substantially ofplate shape and the thickness t is larger than 5 micrometers.

The light emitting semiconductor die 30 crosses over the twoelectrically conductive units 21, and includes a plurality ofsemiconductor layer 310 and two connecting pads 308 a and 308 b. Theconnecting pads 308 a and 308 b are electrically connected to the twoelectrically conductive units 21, respectively. The surface area of theelectrically conductive units 21 is larger than the surface area of thelight emitting semiconductor die 30.

The light transmitting layer 34 covers the light emitting semiconductordie 30 and partially fills within the groove 200 for linking theelectrically conductive units 21 and the light emitting semiconductordie 30, and protecting the light emitting semiconductor die 30, as wellas providing good isolating effect and enhancing light extractingeffect. The light transmitting layer 34 may completely cover the uppersurface 206 of the electrically conductive units 21, as shown in FIG.3Y. In addition, the light emitting semiconductor element may optionallyinclude a shielding layer 22. The shielding layer 22 is disposed on atleast one of the upper surface 206 and the lower surface 208 of theelectrically conductive units 21, where the lower surface 208 isopposite to the upper surface 206.

The light emitting semiconductor element further optionally includes awavelength-converting matter 36 disposed within the light transmittinglayer 34 for converting light emitted from the light emittingsemiconductor die 30 and passing therethrough into wavelength-convertedlight. The wavelength-converting matter 36 may dispose close to or faraway from the light emitting semiconductor die 30. However thewavelength-converting matter may also mix with the light transmittinglayer 34 uniformly.

Furthermore, the light transmitting layer 34 may simultaneously covermultiple light emitting semiconductor dies 20, completely cover theupper surface 206 of the electrically conductive units 21 and the fringethereof, as shown FIG. 3Z. The light emitting semiconductor element mayoptionally include an isolating layer 24 disposed under the shieldinglayer 22. The light transmitting layer 34 partially covers the uppersurface 206 of the electrically conductive units 21, as shown in FIG.3W. In the light emitting semiconductor element, the electricallyconductive units 21 can be optionally bent for fulfilling the functionof convenient insertion, as shown in FIG. 3X.

As shown in FIG. 4A, a lighting module is formed by combining with thelight emitting semiconductor element mentioned above and a base 40 a.For the convenience of following description, the light emittingsemiconductor element is, for example, light emitting diode as FIG. 3Y.The base 40 a may be a circuit board, and at least a circuit pattern 402a is formed thereon. At least a light emitting semiconductor element isplaced on the base 40 a, and the electrically conductive units 21 of thelight emitting semiconductor element is electrically connected to thecircuit pattern 402 a. The amount of the light emitting semiconductorelement may be one or more, and in this embodiment, the amount of thelight emitting semiconductor elements is, for example, two. In addition,the light emitting semiconductor elements are electrically connected inseries through the circuit pattern 402 a. In the practical application,the light emitting semiconductor elements are electrically connected inparallel through the circuit pattern 402 a.

In addition, the lighting module may be attached to a heat radiator,such as, cooling fin. However, as shown in FIG. 4B, the base 40 b of thelighting module may be a heat radiator. The base 40 b is formed with atleast one circuit pattern 402 b in advance. The electrically conductiveunits 21 of the light emitting semiconductor element are electricallyconnected to the circuit pattern 402 b. Thus, the heat generated by thelighting light emitting semiconductor element can quickly conduct to airthrough the base 40 b.

As shown in FIG. 4C, the circuit patterns 404 c may additionally bedisposed on an upper surface of a base 40 c, and an isolating body 402 cis disposed between each two adjoining circuit patterns 404 c forenhancing electrically isolating effect. The light emittingsemiconductor element placed on the base 40 c and electrically connectedto circuit patterns 404 c.

The lighting module mentioned above may be combined with alight-transparent shell 45 to form an illuminant device, as shown inFIG. 5, and the lighting module can provide indoor or outdoor lighting.The illuminant device includes a light module as shown in FIG. 4C andthe light-transparent shell 45. The light-transparent shell 45 isconnected to the base 40 c so that the light emitting semiconductorelement is located between the light-transparent shell 45 and the base40 c, and the light emitting semiconductor element emits light towardthe light-transparent shell 45. In addition, at least one of an innersurface or an outer surface of the light-transparent shell 45 mayinclude a wavelength-converting material, such as phosphor, forconverting light emitted from the light emitting semiconductor elementinto wavelength-converted light, thus fulfilling light convertingeffect. Certainly, the wavelength converting material may be alsodisposed within the light-transparent shell 45.

As shown in FIG. 6A, the light emitting semiconductor elements includean isolating layer 24, and the light emitting semiconductor elements iselectrically connected to each other through a plurality of connectinglines 52. However, the connecting lines 52 may be replaced by aplurality of electrically conductive bumps 56, as shown in FIG. 6B, forelectrically connecting the light emitting semiconductor elements.Furthermore, the electrically conductive bumps 56 may optionally standon the base 50 through an isolating matter 54, thus the electricallyconductive units 21 of the light emitting semiconductor elements arecontacted, and the light emitting semiconductor elements areelectrically connected. Certainly, the light module mentioned in theFIGS. 6A and 6B may be combined with a light-transparent shell to forman indoor or outdoor illuminant device.

To sum up, the electrically conductive units and the light transparentlayer of the light emitting semiconductor element of the presentinvention collectively seals the light emitting semiconductor die, whichcan reduce the volume of the light emitting semiconductor element andenhance the electrically isolating effect. In addition, the thickness ofthe electrically conductive units is larger than 5 micrometers, and thesurface area of the electrically conductive units is larger than thesurface area of the light emitting semiconductor die, thus heatgenerated by the lighting light emitting semiconductor die can quicklyconduct, and the difficulty of soldering the light emittingsemiconductor element and circuit board or other boards can be reduced.

Although the present invention has been described with reference to theforegoing preferred embodiment, it will be understood that the inventionis not limited to the details thereof. Various equivalent variations andmodifications can still occur to those skilled in this art in view ofthe teachings of the present invention. Thus, all such variations andequivalent modifications are also embraced within the scope of theinvention as defined in the appended claims.

1. A light emitting semiconductor element comprising: at least twoelectrically conductive units and a groove located between theelectrically conductive units; at least one light emitting semiconductordie crossing over the electrically conductive units; and a lighttransmitting layer covering the light emitting semiconductor die and atleast filling within the groove for linking the electrically conductiveunits.
 2. The light emitting semiconductor element in claim 1, whereinthe thickness of the electrically conductive units is larger than 5micrometers.
 3. The light emitting semiconductor element in claim 1,wherein a surface area of the electrically conductive units is largerthan a surface area of the light emitting semiconductor die.
 4. Thelight emitting semiconductor element in claim 1, further comprising awavelength-converting matter disposed within the light transmittinglayer.
 5. The light emitting semiconductor element in claim 1, furthercomprising an isolating layer disposed under the electrically conductiveunits.
 6. The light emitting semiconductor element in claim 1, furthercomprising a dam disposed on the electrically conductive units andsurrounding the light emitting semiconductor die, wherein the lighttransmitting layer is disposed within the barricade.
 7. The lightemitting semiconductor element in claim 1, wherein each electricallyconductive unit comprises two second electrically conductive layers andan intermediary layer disposed within the second electrically conductivelayers, the groove at least penetrating one of the second electricallyconductive layers.
 8. The light emitting semiconductor element in claim1, wherein the light transmitting layer partially covers an uppersurface of the electrically conductive units.
 9. The light emittingsemiconductor element in claim 1, wherein the light transmitting layercompletely covers an upper surface of the electrically conductive units.10. The light emitting semiconductor element in claim 1, wherein thelight transmitting layer covers a fringe of the electrically conductiveunits.
 11. The light emitting semiconductor element in claim 1, whereinthe light emitting semiconductor element comprises a plurality ofelectrically conductive units and a plurality of light emittingsemiconductor dies, a groove is located between each two electricallyconductive units, each light emitting semiconductor die is cross overeach two electrically conductive units, and the light emittingsemiconductor dies are electrically connected in parallel or seriesthrough the electrically conductive units.
 12. A light emittingsemiconductor element, comprising: at least two electrically conductiveunits and a groove is located between the electrically conductive units;at least one light emitting semiconductor die placed on one of theelectrically conductive units; at least one wire cross over the lightemitting semiconductor die and another electrically conductive unit; anda light transmitting layer covering the light emitting semiconductor dieand the wire, and at least filling within the groove and linking theelectrically conductive units.
 13. The light emitting semiconductorelement in claim 12, wherein the thickness of the electricallyconductive units is larger than 5 micrometers.
 14. The light emittingsemiconductor element in claim 12, wherein a surface area of theelectrically conductive units is larger than a surface area of the lightemitting semiconductor die.
 15. The light emitting semiconductor elementin claim 12, wherein the light transmitting layer at least covers anupper surface of the electrically conductive units.
 16. The lightemitting semiconductor element in claim 12, wherein the lighttransmitting layer covers a fringe of the electrically conductive units.17. A lighting module comprising: a base; and the light emittingsemiconductor element in claim 1, the light emitting semiconductorelement is placed on a side of the base and electrically connected tothe base.
 18. The lighting module in claim 17, wherein the base is aheat radiator or circuit board.
 19. A manufacturing method of a lightemitting semiconductor element comprising: a) providing a firstelectrically conductive layer; b) forming at least one groove on thefirst electrically conductive layer; c) placing at least one lightemitting semiconductor die on the first electrically conductive layerand electrically connected to the first electrically conductive layer attwo sides of the groove; d) forming a light transmitting layer on thefirst electrically conductive layer and the light emitting semiconductordie, the light transmitting layer covering the light emittingsemiconductor die, linking the first electrically conductive layer andat least partially filling within the groove.
 20. The manufacturingmethod of a light emitting semiconductor element in claim 19, whereinthe light emitting semiconductor die is cross over the firstelectrically conductive layer at two sides of the groove, the groove isat least exposed to the light emitting semiconductor die, the lighttransmitting layer and the first electrically conductive layercollectively and compactly covers the light emitting semiconductor die.21. The manufacturing method of a light emitting semiconductor elementin claim 19, further comprising forming an isolating layer under thefirst electrically conductive layer.
 22. The manufacturing method of alight emitting semiconductor element in claim 19, further comprisingdisposing a wavelength-converting matter and covers the light emittingsemiconductor die.
 23. The manufacturing method of a light emittingsemiconductor element in claim 19, further comprising disposing awavelength-converting matter within the light transmitting layeruniformly.
 24. The manufacturing method of a light emittingsemiconductor element in claim 19, further comprising disposing awavelength-converting matter on the light transmitting layer.
 25. Themanufacturing method of a light emitting semiconductor element in claim19, after step c, further comprises a step cl: disposing at least a wirebetween the light emitting semiconductor die and the first electricallyconductive layer at one side of the groove, the light emittingsemiconductor die is placed on the first electrically conductive layerat another side of the groove.